MT53E128M32D2DS-053 vs MT53E256M32D2DS-053 WT:B Vergleich
Detaillierter Direktvergleich von MT53E128M32D2DS-053 von Micron Technology und MT53E256M32D2DS-053 WT:B von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
MT53E128M32D2DS-053 - 4Gb LPDDR4/LPDDR4X DRAM | Micron
MT53E128M32D2DS-053 ✓ AktivMicron Technology
MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron
MT53E256M32D2DS-053 WT:B ✓ AktivSpezifikationsvergleich
| Parameter | MT53E128M32D2DS-053 | MT53E256M32D2DS-053 WT:B |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,55 | $21,90 |
| Speichertyp | Mobile LPDDR4 / LPDDR4X SDRAM (unified) | LPDDR4 SDRAM (Mobile DRAM) |
| Density | 4 Gbit | 8 Gbit (256M x 32) |
| Speicherorganisation | 128M x 32 | 256M x 32 |
| Datenrate | 1.866 GHz (1866 Mbps/pin) | 1866 Mbps/pin (1.866 GHz) |
| Speed Grade | -053 | — |
| Gehäuse | 200-ball WFBGA (10 x 14.5 mm) | 200-ball WFBGA, 10 x 14.5 mm |
| VDDQ (LPDDR4X mode) | 0.6 V | — |
| VDDQ (LPDDR4 mode) | 1.10 V | — |
| VDD | [DATA_NEEDED: VDD supply voltage] | — |
| Configuration | DDP (double-die package) | — |
| Montageart | Surface Mount | Surface Mount (BGA) |
| Automotive Variant | MT53E128M32D2DS-053 AUT:A / AAT:A / AIT:A available | — |
| RoHS-Status | Compliant | Compliant (per JLCPCB/LCSC listing) |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| Refresh | [DATA_NEEDED: refresh mode 8x/16x] | — |
| Access Type | Synchronous, bank-group burst | — |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL level] |
| Supply Voltage (VDD2/VDDQ) | — | 1.1 V |
| Operating Temperature (WT grade) | — | -30C to +85C |
| Self-Refresh | — | Auto self-refresh with built-in temperature sensor |
| Eigenschaften | — | Auto precharge, write leveling, ZQ calibration |
| Bus Width | — | 32-bit |
| Peak Bandwidth (per device) | — | approximately 7.46 GB/s (32-bit x 1866 Mbps) |
| Access Time / CAS Latency | — | [DATA_NEEDED: CL at 1866 Mbps] |
| Refresh Interval | — | [DATA_NEEDED: tREFI specification] |
| Package Height | — | [DATA_NEEDED: max package height] |